, o ne. 20 stern ave, springfield, new jersey 07081 u.s.a. silicon pnp darlington power transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 2SB1503 description ? high dc current gain- : hfe= 5000(min)@lc= -7a ? low-collector saturation voltage- : vce silicon pnp darlington power transistor 2SB1503 electrical characteristics tc=25'c unless otherwise specified symbol v(br)ceo vce(sat) vee(sat) icbo iceo iebo hpe-1 hpe-2 fl parameter collector-emitter breakdown voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current collector cutoff current emitter cutoff current dc current gain dc current gain current-gain ? bandwidth product conditions lc= -30ma; ib= 0 lc= -7a; ib= -7ma lo= -7a; ib= -7ma vgb=-160v;ie=0 vce=-140v; ib=0 veb= -5v; lc= 0 lc=-1a;vce=-5v lc= -7a; vce= -5v lc=-0.5a;vce=-10v min -140 2000 5000 typ. 20 max -2.5 -3.0 -100 -100 -100 30000 unit v v v ua ua ua mhz switching times ton utg tf turn-on time storage time fall time lc= -7a; ib1= -\b2- -7ma, vcc= -50v 1.0 1.5 1.2 u s u s 11 s hpe-2 classifications q 5000-15000 s 7000-21000 p 8000-30000
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